Brian Willis

WillisBrian_profileBrian Willis
Associate Professor
Ph.D., MIT (1999)

Department of Chemical & Biomolecular Engineering
191 Auditorium Road, Unit 3222
Storrs, CT 06269-3222
Office: EII-209
Phone: (860) 486-9429
Email:   Web:




Research Interests

  • Epitaxial Oxides on Semiconductors
  • Scanning Tunneling Microscopy Investigations of Organic/Semiconductor Interfaces
  • Tunneling Spectroscopy for Molecular Electronics and Nano-Sensors
  • Nanoscale Investigations of Electrocatalysis

Awards & Honors

2007 Nanotech Measurement Contest (sponsored by Keithley Instruments, Inc.), 2nd place (with graduate student R. Gupta)
2005 National Science Foundation Career Award
2003 Emmert Faculty Fellow 2003
1992 Dow Award for 1st Course in Chemical Engineering

Recent Publications

Hsu, I. J.; Kimmel, Y. C.; Jiang, X.; Willis, B. G.; Chen, J. G., Atomic Layer Deposition Synthesis of Platinum-Tungsten Carbide Core-Shell Catalysts for the Hydrogen Evolution Reaction, Chem. Commun. 2012, 48, p. 1063-1065.

Hsu, I. J.; Hansgen, D. A.; McCandless, B. E.; Willis, B. G.; Chen, J. G., Atomic Layer Deposition of Pt on Tungsten Monocarbide (WC) for the Oxygen Reduction Reaction, J. Phys. Chem. C 2011, 115, 3709.

Wang, H.; Jiang, X.; Willis, B. G., Real-time Spectroscopic Ellipsometric Investigation of Adsorption and Desorption in Atomic Layer Deposition, J. Vac. Sci. Technol. A 30(1), (2011).

Willis, B. G.; Zhang, C. B.; Wielunski, L., Formation of Strontium Template on Si(1 0 0) by Atomic Layer Deposition, Appl Surf Sci 2011, 257, 4826.

D. B. Skliar and B. G. Willis, “The role of dangling bonds in H2O induced oxidation of Si(100)-2×1,” J. Phys. Chem. C, v. 112, p. 9434 (2008).

B. G. Willis and A. Mathew, “Growth of ordered SrO layers on Si(100) using metal-organic surface reactions,” J. Vac. Sci. Technol. A, v. 26, p. 83 (2008).

B. G. Willis, A. Mathew, L. Wielunski and R. Opila, “Adsorption and reaction of HfCl4 with H2O terminated Si(100)-2×1,” J. Phys. Chem. C, v. 112, p. 1994 (2008).

R. Gupta and B.G. Willis, “Nanometer spaced electrodes using selective area atomic layer deposition,” Virtual Journal of Nanoscale Science & Technology v. 16, p. 1 (2007).

R. Gupta and B.G. Willis, “Nanometer spaced electrodes using selective area atomic layer deposition,” Applied Physics Letters v. 90, p. 253102 (2007).

D. Skliar, C. Gelmi, and B.G. Willis, “STM investigation of the product distribution from the interaction of 2,2,6,6-tetramethyl-3,5-heptandionate with Si(100)-2×1,” Surface Science, v. 601, p. 2887 (2007).

K. Beadle, R. Gupta, A. Mathew, J.G. Chen, B.G. Willis, “Chemical vapor deposition of phase-rich WC thin films on silicon and carbon substrates,” Thin Solid Films, v. 516, p. 3847 (2008).

L.P. Shepherd, A. Mathew, B.E. McCandless, and B.G. Willis, “Oxygen pressure dependence of copper ion transport in SiO2 dielectrics,” J. Vac. Sci. Technol. B 24(3) p. 1297 (2006).

E.C. Weigert, N.A. Smith, B.G. Willis, J.G. Chen, “PVD Synthesis and Characterization of Pt-Modified molybdenum carbides as potential electrocatalysts,” Electrochemical and Solid State Letters, 8 (7) p. A 337 (2005).

“Bonding States and Coverage Calculations for HfO2 Deposited on H2O terminated Si (100)-2×1 using Atomic Layer Deposition,” A. Mathews, R. Opila and B. Willis, E4 Symposium”High Dielectric Constant Materials and Gate Stack 5,” of the 212th Meeting of the Electrochemical Society, v. 11, (2007).